UV and visible light controllable depletion zone of ZnO-polyaniline p-n junction and its application in a photoresponsive sensor

被引：19

作者：

Gong, Jian ^{[1
,2
]}

Li, Yinhua ^{[1
,3
]}

Deng, Yulin ^{[1
]}

机构：

[1] Georgia Inst Technol, Sch Chem & Biomol Engn, Atlanta, GA 30332 USA

[2] NE Normal Univ, Key Lab Polyoxometalate Sci, Minist Educ, Dept Chem, Changchun 130024, Jilin, Peoples R China

[3] Dalian Univ Technol, State Key Lab Fine Chem Chem Engn & Technol, Dalian 116012, Peoples R China

来源：

PHYSICAL CHEMISTRY CHEMICAL PHYSICS | 2010年 / 12卷 / 45期

关键词：

SENSITIZED SOLAR-CELLS; ARRAYS;

D O I：

10.1039/c0cp01101k

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In this communication, we report that the depletion zone thickness of the p-n junction between an n-type ZnO and a p-type polyaniline could be controlled by UV and visible light illumination. Based on this princile, photoresponsive sensors were constructed by combining polyaniline thin film and ZnO nanorods. Different from pure ZnO nanomaterials whose conductivity increases when they are exposed to UV illumination, the conductivity of the photoresponsive sensor studied in this communication decreased when the UV light was turned on. The surface modification of ZnO could switch the wavelength of the response light from UV to visible light.

引用

页码：14864 / 14867

页数：4

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