Lifetime modeling of thermomechanics-related failure mechanisms in high power IGBT modules for traction applications

被引：13

作者：

Ciappa, M ^{[1
]}

Carbognani, F ^{[1
]}

Fichtner, W ^{[1
]}

机构：

[1] Swiss Fed Inst Technol, ETH, Integrated Syst Lab, Zurich, Switzerland

来源：

ISPSD'03: 2003 IEEE 15TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS PROCEEDINGS | 2003年

关键词：

D O I：

10.1109/ISPSD.2003.1225286

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we propose different procedures to extract the statistical distribution of the thermal cycles suffered by power devices submitted to arbitrary mission profiles and we discuss the different lifetimes predicted by them under the assumption of linear accumulation of the damage produced by low cycling fatigue. Furthermore, we introduce a novel prediction procedure, which is based on some fundamental equations, which take into consideration the creep experienced by compliant materials when they are submitted to thermal cycles.

引用

页码：295 / 298

页数：4

共 47 条

[31] Modeling Lifetime of High Power IGBTs in Wind Power Applications - An overview [J].

Busca, Cristian .

2011 IEEE INTERNATIONAL SYMPOSIUM ON INDUSTRIAL ELECTRONICS (ISIE), 2011,

[32] Lifting-Off of Al Bonding Wires in IGBT Modules Under Power Cycling: Failure Mechanism and Lifetime Model [J].

Huang, Yongle ;

Jia, Yingjie ;

Luo, Yifei ;

Xiao, Fei ;

Liu, Binli .

IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS, 2020, 8 (03) :3162-3173

[33] Comparison of stress distributions and failure modes during thermal cycling and power cycling on high power IGBT modules [J].

Bouarroudj, M. ;

Khatir, Z. ;

Ousten, J. P. ;

Dupont, L. ;

Lefebvre, S. ;

Badel, F. .

2007 EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS, VOLS 1-10, 2007, :2842-+

[34] Hybrid Si IGBT-SiC Schottky Diode Modules For Medium to High Power Applications [J].

Amber, Leif ;

Haddad, Kevork .

2017 THIRTY SECOND ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC), 2017, :3027-3032

[35] DESIGN OF HIGH-SPEED IGBT-BASED SWITCHING MODULES FOR PULSED POWER APPLICATIONS [J].

Kluge, Andreas ;

Goehler, Lutz ;

Gueldner, Henry ;

Trompa, Thomas ;

Mory, David ;

Segsa, Karl-Heinz .

2014 INTERNATIONAL POWER ELECTRONICS CONFERENCE (IPEC-HIROSHIMA 2014 - ECCE-ASIA), 2014, :2554-2561

[36] Life-cycle energy demand comparison of medium voltage Silicon IGBT and Silicon Carbide MOSFET power semiconductor modules in railway traction applications [J].

Spejo L.B. ;

Akor I. ;

Rahimo M. ;

Minamisawa R.A. .

Power Electronic Devices and Components, 2023, 6

[37] Failure mechanisms associated with lens shape of high-power LED modules in aging test [J].

Hsu, Y. C. ;

Lin, Y. K. ;

Tsai, C. C. ;

Kuang, J. H. ;

Huang, S. B. ;

Hu, H. L. ;

Su, Y. I. ;

Cheng, W. H. .

2007 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2, 2007, :570-+

[38] Failure mechanisms associated with lens shape of high-power LED modules in aging test [J].

Hsu, Yi-Cheng ;

Lin, Yu-Kuan ;

Chen, Ming-Hung ;

Tsai, Chun-Chin ;

Kuang, Jao-Hwa ;

Huang, Sheng-Bang ;

Hu, Hung-Lieh ;

Su, Yeh-I ;

Cheng, Wood-Hi .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (02) :689-694

[39] Failure Mechanism of Die-Attach Solder Joints in IGBT Modules Under Pulse High-Current Power Cycling [J].

Huang, Yongle ;

Luo, Yifei ;

Xiao, Fei ;

Liu, Binli .

IEEE JOURNAL OF EMERGING AND SELECTED TOPICS IN POWER ELECTRONICS, 2019, 7 (01) :99-107

[40] Gate-Emitter Pre-threshold Voltage as a Health-Sensitive Parameter for IGBT Chip Failure Monitoring in High-Voltage Multichip IGBT Power Modules [J].

Mandeya, Richard ;

Chen, Cuili ;

Pickert, Volker ;

Naayagi, R. T. ;

Ji, Bing .

IEEE TRANSACTIONS ON POWER ELECTRONICS, 2019, 34 (09) :9158-9169

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