Lifetime modeling of thermomechanics-related failure mechanisms in high power IGBT modules for traction applications

被引:13
作者
Ciappa, M [1 ]
Carbognani, F [1 ]
Fichtner, W [1 ]
机构
[1] Swiss Fed Inst Technol, ETH, Integrated Syst Lab, Zurich, Switzerland
来源
ISPSD'03: 2003 IEEE 15TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS PROCEEDINGS | 2003年
关键词
D O I
10.1109/ISPSD.2003.1225286
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, we propose different procedures to extract the statistical distribution of the thermal cycles suffered by power devices submitted to arbitrary mission profiles and we discuss the different lifetimes predicted by them under the assumption of linear accumulation of the damage produced by low cycling fatigue. Furthermore, we introduce a novel prediction procedure, which is based on some fundamental equations, which take into consideration the creep experienced by compliant materials when they are submitted to thermal cycles.
引用
收藏
页码:295 / 298
页数:4
相关论文
共 47 条
  • [21] Compact modelling and analysis of power-sharing unbalances in IGBT-modules used in traction applications
    Castellazzi, A.
    Ciappa, M.
    Fichtner, W.
    Lourdel, G.
    Mermet-Guyennet, M.
    MICROELECTRONICS RELIABILITY, 2006, 46 (9-11) : 1754 - 1759
  • [22] A novel thermomechanics-based lifetime prediction model for cycle fatigue failure mechanisms in power semiconductors
    Ciappa, M
    Carbognani, F
    Cova, P
    Fichtner, W
    MICROELECTRONICS RELIABILITY, 2002, 42 (9-11) : 1653 - 1658
  • [23] PD measurements, failure analysis, and control in high-power IGBT modules
    Ghassemi, Mona
    HIGH VOLTAGE, 2018, 3 (03): : 170 - 178
  • [24] Ageing and Failure Modes of IGBT Modules in High-Temperature Power Cycling
    Smet, Vanessa
    Forest, Francois
    Huselstein, Jean-Jacques
    Richardeau, Frederic
    Khatir, Zoubir
    Lefebvre, Stephane
    Berkani, Mounira
    IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, 2011, 58 (10) : 4931 - 4941
  • [25] Power cycling failure analysis of double side cooled IGBT modules for automotive applications
    Ma, Yaqing
    Li, Jianfeng
    Dong, Fangfang
    Yu, Jun
    MICROELECTRONICS RELIABILITY, 2021, 124
  • [26] Low inductance, explosion robust IGBT modules in high power inverter applications
    Schnur, L
    Debled, G
    Dewar, S
    Marous, J
    CONFERENCE RECORD OF THE 1998 IEEE INDUSTRY APPLICATIONS CONFERENCE, VOLS 1-3, 1998, : 1056 - 1060
  • [27] Wire-bond contact degradation modeling for remaining useful lifetime prognosis of IGBT power modules
    Nazar, M.
    Ibrahim, A.
    Khatir, Z.
    Degrenne, N.
    Al-Masry, Z.
    MICROELECTRONICS RELIABILITY, 2020, 114 (114)
  • [28] Lifetime analysis of solder joints in high power IGBT modules for increasing the reliability for operation at 150 °C
    Feller, L.
    Hartmann, S.
    Schneider, D.
    MICROELECTRONICS RELIABILITY, 2008, 48 (8-9) : 1161 - 1166
  • [29] Some scaling issues in the active voltage control of IGBT modules for high power applications
    Palmer, PR
    Githiari, AN
    Leedham, RJ
    PESC'97: 28TH ANNUAL IEEE POWER ELECTRONICS SPECIALISTS CONFERENCE - RECORD, VOLS I AND II, 1997, : 854 - 860
  • [30] Humidity robustness for high voltage power modules: Limiting mechanisms and improvement of lifetime
    Kremp, S.
    Schilling, O.
    MICROELECTRONICS RELIABILITY, 2018, 88-90 : 447 - 452