Lifetime modeling of thermomechanics-related failure mechanisms in high power IGBT modules for traction applications

被引：13

作者：

Ciappa, M ^{[1
]}

Carbognani, F ^{[1
]}

Fichtner, W ^{[1
]}

机构：

[1] Swiss Fed Inst Technol, ETH, Integrated Syst Lab, Zurich, Switzerland

来源：

ISPSD'03: 2003 IEEE 15TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS PROCEEDINGS | 2003年

关键词：

D O I：

10.1109/ISPSD.2003.1225286

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we propose different procedures to extract the statistical distribution of the thermal cycles suffered by power devices submitted to arbitrary mission profiles and we discuss the different lifetimes predicted by them under the assumption of linear accumulation of the damage produced by low cycling fatigue. Furthermore, we introduce a novel prediction procedure, which is based on some fundamental equations, which take into consideration the creep experienced by compliant materials when they are submitted to thermal cycles.

引用

页码：295 / 298

页数：4

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