Silicon switching structures with fluorides of rare-earth elements

被引：1

作者：

Rozhkov, VA ^{[1
]}

Shalimova, MB ^{[1
]}

机构：

[1] Samara State Univ, Samara 443086, Russia

来源：

TECHNICAL PHYSICS LETTERS | 1998年 / 24卷 / 08期

关键词：

D O I：

10.1134/1.1262237

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Results are presented of an investigation of the photoelectric characteristics of silicon metal-insulator-metal switching structures with a thin-film insulating layer of rare-earth fluoride. Studies of the steady-state and kinetic characteristics of the photocurrent revealed that in the low-resistivity state the metal-tunnel insulator-semiconductor model can be applied to the structures. (C) 1998 American Institute of Physics.

引用

页码：663 / 664

页数：2

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