Silicon switching structures with fluorides of rare-earth elements

被引:1
|
作者
Rozhkov, VA [1 ]
Shalimova, MB [1 ]
机构
[1] Samara State Univ, Samara 443086, Russia
关键词
D O I
10.1134/1.1262237
中图分类号
O59 [应用物理学];
学科分类号
摘要
Results are presented of an investigation of the photoelectric characteristics of silicon metal-insulator-metal switching structures with a thin-film insulating layer of rare-earth fluoride. Studies of the steady-state and kinetic characteristics of the photocurrent revealed that in the low-resistivity state the metal-tunnel insulator-semiconductor model can be applied to the structures. (C) 1998 American Institute of Physics.
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页码:663 / 664
页数:2
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