Study of thermal oxidation of NiO buffers on Ni-based tapes for superconductor substrates

被引:21
作者
Lockman, Z [1 ]
Qi, XD
Berenov, A
Nast, R
Goldacker, W
MacManus-Driscoll, J
机构
[1] Univ London Sch Pharm, Dept Mat, London SW7 2BP, England
[2] Forschungszentrum Karlsruhe, D-76344 Eggenstein Leopoldshafen, Germany
来源
PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS | 2001年 / 351卷 / 01期
关键词
Ni-based substrate; NiO buffer layer;
D O I
10.1016/S0921-4534(00)01686-5
中图分类号
O59 [应用物理学];
学科分类号
摘要
NiO on Ni-based textured substrates is a potential buffer layer system for growth of superconductor films for conductor applications. In this work, the high temperature oxidation of NiO has been studied under different oxygen partial pressures. Pure Ni, Ni-10%Cr and Cr-coated Ni have been studied. Pure Ni when oxidised at 1250 degreesC for 3 h in P-O2 similar to 1 atm has shown excellent pure cube texture. Ni-10%Cr oxidised under the same condition has shown the same texture, however the tape becomes very brittle. The conditions for reproducible growth of highly cube textured NiO are determined. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:34 / 37
页数:4
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