Structural Phase Control in Self-Catalyzed Growth of GaAs Nanowires on Silicon (111)

被引：194

作者：

Krogstrup, Peter ^{[1
]}

Popovitz-Biro, Ronit ^{[2
]}

Johnson, Erik ^{[1
]}

Madsen, Morten Hannibal ^{[1
]}

Nygard, Jesper ^{[1
]}

Shtrikman, Hadas ^{[3
]}

机构：

[1] Univ Copenhagen, Niels Bohr Inst, Nanosci Ctr, DK-1168 Copenhagen, Denmark

[2] Electron Microscopy Unit, IL-76100 Rehovot, Israel

[3] Weizmann Inst Sci, Braun Ctr Submicron Res, IL-76100 Rehovot, Israel

来源：

NANO LETTERS | 2010年 / 10卷 / 11期

关键词：

Nanowire; molecular beam epitaxy; wurtzite; zinc blonde; twin planes; GaAs; GALLIUM-ARSENIDE NANOWIRES; THERMODYNAMIC PROPERTIES; OPTIMIZATION; DIAGRAMS;

D O I：

10.1021/nl102308k

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Au free GaAs nanowires with zinc blende structure, free of twin planes and with remarkable aspect ratios, have been grown on (111) Si substrates by molecular beam epitaxy. Nanowires with diameters down to 20 nm are obtained using a thin native oxide layer on the Si substrates. We discuss how the structural phase distribution along the wire length is controlled by the effective V/III ratio and temperature at the growth interface and explain how to obtain a pure twin plane free zinc blende structure.

引用

页码：4475 / 4482

页数：8

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