Characteristics of SiC MOSFET in a Wide Temperature Range

被引：3

作者：

Zhu, Mengyu ^{[1
]}

Wang, Laili ^{[1
]}

Li, Huaqing ^{[1
]}

Yang, Chengzi ^{[1
]}

Ma, Dingkun ^{[1
]}

Yang, Fengtao ^{[1
]}

机构：

[1] Xi An Jiao Tong Univ, Coll Artificial Intelligence, Xian, Peoples R China

来源：

2021 IEEE WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS IN ASIA (WIPDA ASIA 2021) | 2021年

关键词：

SiC MOSFET; SiC SBD; high temperature;

D O I：

10.1109/WIPDAASIA51810.2021.9656056

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

In order to expand the application of SiC MOSFET in a wide temperature range, the performance of SiC MOSFET from 25 degrees C to 425 degrees C is studied in this paper by taking the 1.2 kV QPM3-1200-0013D as an example. Different from the device characteristics given in the data sheet or previous articles at only three discrete temperatures or temperatures below 250 degrees C, the temperature-dependent static characteristics of SiC MOSFET are remeasured and nonlinearly characterized in a wide temperature range in this paper. In addition, considering the improvement effect of SiC Schottky barrier diode on reliability of SiC MOSFET's body diode, the temperature-dependent static characteristics of SiC Schottky barrier diode are also analyzed in this paper, which provides guidance for the high-temperature pre-design and application of SiC MOSFET.

引用

页码：79 / 82

页数：4

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