Experimental evidence for the role of electrodes and oxygen vacancies in voltage nonlinearities observed in high-k metal-insulator-metal capacitors

被引：41
作者：
El Kamel, F.
Gonon, P.
Vallée, C.
机构：
[1] Univ Grenoble 1, CEA Leti D2NT LTM, Microelect Technol Lab LTM, F-38054 Grenoble 9, France
[2] G2ELab, French Natl Res Ctr, CNRS, F-38042 Grenoble, France
[3] LabMOP, Tunis 2092, Tunisia
来源：
APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 17期
关键词：
D O I：
10.1063/1.2803221
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
This work reports on voltage nonlinearities in metal-insulator- metal (MIM) capacitors using amorphous barium titanate (a-BaTiO3) thin films. It is experimentally demonstrated that voltage nonlinearity is related to the formation of a double layer at electrodes (electrode polarization mechanism). The magnitude of nonlinearities is shown to be controlled by the nature of the metal contacts (Al, Cu, Au, and Ag), as well as by the presence of oxygen during film deposition. It is thought that oxygen vacancies are the defects responsible for the nonlinear character of high-k oxide-based MIM capacitors. (C) 2007 American Institute of Physics.
引用
收藏
页数：3
相关论文
共 18 条
[1]   Analog characteristics of metal-insulator-metal capacitors using PECVD nitride dielectrics [J].
Babcock, JA ;
Balster, SG ;
Pinto, A ;
Dirnecker, C ;
Steinmann, P ;
Jumpertz, R ;
El-Kareh, B .
IEEE ELECTRON DEVICE LETTERS, 2001, 22 (05) :230-232
[2]   Microscopic model for dielectric constant in metal-insulator-metal capacitors with high-permittivity metallic oxides -: art. no. 052902 [J].
Bécu, S ;
Crémer, S ;
Autran, JL .
APPLIED PHYSICS LETTERS, 2006, 88 (05) :1-3
[3]   Investigation and modeling of the electrical properties of metal-oxide-metal structures formed from chemical vapor deposited Ta2O5 films [J].
Blonkowski, S ;
Regache, M ;
Halimaoui, A .
JOURNAL OF APPLIED PHYSICS, 2001, 90 (03) :1501-1508
[4]  
BOCKRIS JO, 1970, MODERN ELECTROCHEMIS, V2, P731
[5]   Oxygen vacancy in monoclinic HfO2:: A consistent interpretation of trap assisted conduction, direct electron injection, and optical absorption experiments [J].
Broqvist, Peter ;
Pasquarello, Alfredo .
APPLIED PHYSICS LETTERS, 2006, 89 (26)
[6]   Thermal leakage improvement by using a high-work-function ni electrode in high-κ TiHfO metal-insulator-metal capacitors [J].
Chiang, K. C. ;
Huang, C. C. ;
Pan, H. C. ;
Hsiao, C. N. ;
Lin, J. W. ;
Hsieh, I. J. ;
Cheng, C. H. ;
Chou, C. P. ;
Chin, A. ;
Hwang, H. L. ;
McAlister, S. P. .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2007, 154 (03) :G54-G57
[7]   Electrical property improvements of yttrium oxide-based metal-insulator-metal capacitors [J].
Durand, C. ;
Vallee, C. ;
Dubourdieu, C. ;
Kahn, M. ;
Derivaz, M. ;
Blonkowski, S. ;
Jalabert, D. ;
Hollinger, P. ;
Fang, Q. ;
Boyd, I. W. .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2006, 24 (03) :459-466
[8]   Space charge limited transient currents and oxygen vacancy mobility in amorphous BaTiO3 thin films [J].
El Kamel, F. ;
Gonon, P. ;
Ortega, L. ;
Jomni, F. ;
Yangui, B. .
JOURNAL OF APPLIED PHYSICS, 2006, 99 (09)
[9]   Negative oxygen vacancies in HfO2 as charge traps in high-k stacks [J].
Gavartin, J. L. ;
Ramo, D. Munoz ;
Shluger, A. L. ;
Bersuker, G. ;
Lee, B. H. .
APPLIED PHYSICS LETTERS, 2006, 89 (08)
[10]   Dielectric response of cu/amorphous BaTiO3/Cu capacitors [J].
Gonon, P. ;
El Kamel, F. .
JOURNAL OF APPLIED PHYSICS, 2007, 101 (07)
12