About the "phosphorus" sensitization of silicon quantum dots inSiO2 photoluminescence

被引:2
作者
Tetelbaum, DI [1 ]
Burdov, VA [1 ]
Mikhaylov, AN [1 ]
Trushin, SA [1 ]
机构
[1] Univ Nizhnii Novgorod, Physicotech Res Inst, Nizhnii Novgorod 603950, Russia
来源
10TH INTERNATIONAL SYMPOSIUM ON NANOSTRUCTURES: PHYSICS AND TECHNOLOGY | 2003年 / 5023卷
关键词
silicon quantum dot; phosphorus doping; recombination; photoluminescence;
D O I
10.1117/12.513634
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
The question about the mechanisms of the photoluminescence enhancement of the system of silicon nanocrystals embedded into silica matrix at phosphorus doping is described. Both the experimental and theoretical arguments are presented.
引用
收藏
页码:186 / 189
页数:4
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