Study on ZnO:Al (ZAO) thin films prepared by sol-gel process

被引：0

作者：

Chen Huangli ^{[1
]}

Luo Fa ^{[1
]}

Zhou Wancheng ^{[1
]}

Zhu Dongmei ^{[1
]}

Wu Honghuan ^{[1
]}

机构：

[1] Northwestern Polytech Univ, State Key Lab Solidificat Proc, Xian 710072, Peoples R China

来源：

RARE METAL MATERIALS AND ENGINEERING | 2007年 / 36卷

关键词：

sol-gel process; Al3+ doping; ZAO thin film;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

ZAO thin films doped with different aluminum concentration were deposited on quartz glass substrates by sol-gel technique. The process, doping and microstructure of the films were studied. Al was incorporated into the sol with AlCl(3 center dot)6H(2)O. The content of Al doped in the ZnO was 1%, 3%, 6% and 9%, respectively. The effect of heat treatment and doping content on the phase and microstructure of ZnO were investigated. The results show that no peaks of Al2O3 occur in the XRD patterns and peaks shift to low 20, variation of d-spacing of ZnO in the films were found at the same time, which indicated that Al was doped into ZnO lattice. The microstructure of the films was related to content of sol and heat treatment. ZnO grains in thinner films show random growth during heat treatment and preferential orientation growth of ZnO grains along the (002) direction was found in the thicker films.

引用

页码：889 / 891

页数：3

共 11 条

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