Influence of N2 proportion on mechanical properties of SiCN thin films prepared by DIBSD

被引：2
作者：
Hong, Bo [1 ,3 ]
Wu, Xuemei [1 ,3 ]
Zhuge, Lanjian [1 ,2 ]
Wu, Zhaofeng [1 ,3 ]
Zhou, Fei [4 ]
机构：
[1] Soochow Univ, Sch Phys Sci & Technol, Suzhou 215006, Peoples R China
[2] Soochow Univ, Anal & Testing Ctr, Suzhou 215006, Peoples R China
[3] Soochow Univ, Jiangsu key Lab Thin Films, Suzhou 215006, Peoples R China
[4] Nanjing Univ Aeronaut & Astronaut, Acad Frontier Sci, Lab Funct Film, Nanjing 210016, Peoples R China
来源：
MANUFACTURING SCIENCE AND ENGINEERING, PTS 1-5 | 2010年 / 97-101卷
基金：
中国国家自然科学基金;
关键词：
SiCN; Hardness; Surface roughness; CHEMICAL-VAPOR-DEPOSITION; NITRIDE; PLASMA; COATINGS; HARDNESS; SOLIDS; SYSTEM; TARGET;
D O I：
10.4028/www.scientific.net/AMR.97-101.1243
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Amorphous silicon carbide nitride (SiCN) films have been deposited in a dual ion beam sputtering deposition (DIBSD) using a SiC target. Films with various compositions were obtained by changing the nitrogen and argon gas ratio in the assisted ion source. Mechanical properties of the SiCN films were evaluated by Nano-indentation in N-2 ambient. Surface morphology of the films was characterized by an Atomic Force Microscope (AFM). The microstructure and chemical bonding correlating with behavior of the films were studied by a Fourier transform infrared spectroscopy (FTIR) and a laser Raman spectroscopy. The results show that N-2 proportion in the assisted ion source has a great effect on the structure and properties of the films and the mechanism was discussed in brief.
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收藏
页码：1243 / +
页数：3
相关论文
共 20 条
[1]   Structural characterization of amorphous SiCxNy chemical vapor deposited coatings [J].
Bendeddouche, A ;
Berjoan, R ;
Beche, E ;
MerleMejean, T ;
Schamm, S ;
Serin, V ;
Taillades, G ;
Pradel, A ;
Hillel, R .
JOURNAL OF APPLIED PHYSICS, 1997, 81 (09) :6147-6154
[2]   Hardness and stiffness of amorphous SiCxNy chemical vapor deposited coatings [J].
Bendeddouche, A ;
Berjoan, R ;
Bêche, E ;
Hillel, R .
SURFACE & COATINGS TECHNOLOGY, 1999, 111 (2-3) :184-190
[3]   Forming silicon carbon nitride crystals and silicon carbon nitride nanotubes by microwave plasma-enhanced chemical vapor deposition [J].
Chang, HL ;
Hsu, CM ;
Kuo, CT .
APPLIED PHYSICS LETTERS, 2002, 80 (24) :4638-4640
[4]   Wide band gap silicon carbon nitride films deposited by electron cyclotron resonance plasma chemical vapor deposition [J].
Chen, KH ;
Wu, JJ ;
Wen, CY ;
Chen, LC ;
Fan, CW ;
Kuo, PF ;
Chen, YF ;
Huang, YS .
THIN SOLID FILMS, 1999, 355 :205-209
[5]   Intensive light emission from SiCN films by reactive RF magnetron sputtering [J].
Du, X-W. ;
Fu, Y. ;
Sun, J. ;
Yao, P. ;
Cui, L. .
MATERIALS CHEMISTRY AND PHYSICS, 2007, 103 (2-3) :456-460
[6]   Mechanical and optical properties of hard SiCN coatings prepared by PECVD [J].
Jedrzejowski, P ;
Cizek, J ;
Amassian, A ;
Klemberg-Sapieha, JE ;
Vlcek, J ;
Martinu, L .
THIN SOLID FILMS, 2004, 447 :201-207
[7]   Effect of assistant RF plasma on structure and properties of SiCN thin films prepared by RF magnetron sputtering of SiC target [J].
Li, W. L. ;
Yang, J. L. ;
Zhao, Y. ;
Fei, W. D. .
JOURNAL OF ALLOYS AND COMPOUNDS, 2009, 482 (1-2) :317-319
[8]   Raman analysis of Si-C-N films grown by reactive magnetron sputtering [J].
Liang, EJ ;
Zhang, JW ;
Leme, J ;
Moura, C ;
Cunha, L .
THIN SOLID FILMS, 2004, 469 :410-415
[9]   Fabrication of SiCN MEMS by photopolymerization of pre-ceramic polymer? [J].
Liew, LA ;
Liu, YP ;
Luo, RL ;
Cross, T ;
An, LN ;
Bright, VM ;
Dunn, ML ;
Daily, JW ;
Raj, R .
SENSORS AND ACTUATORS A-PHYSICAL, 2002, 95 (2-3) :120-134
[10]   STRUCTURAL-PROPERTIES AND ELECTRONIC-STRUCTURE OF LOW-COMPRESSIBILITY MATERIALS - BETA-SI3N4 AND HYPOTHETICAL BETA-C3N4 [J].
LIU, AY ;
COHEN, ML .
PHYSICAL REVIEW B, 1990, 41 (15) :10727-10734
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