Electron emission from amorphous silicon thin films

被引：9

作者：

Silva, SRP ^{[1
]}

Forrest, RD ^{[1
]}

Shannon, JM ^{[1
]}

机构：

[1] Univ Surrey, Dept Elect & Elect Engn, Guildford GU2 5XH, Surrey, England

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1998年 / 227卷

关键词：

electron emission; amorphous silicon; low threshold fields;

D O I：

10.1016/S0022-3093(98)00292-0

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Flat panel displays based on field emission provide an important alternative technology for the fabrication of bright and efficient displays. In this paper, we report the emission of electrons from flat hydrogenated amorphous silicon (a-Si:H) thin films, for the first time, at low threshold fields. Electron emission with electric fields of 5 V/mu m in the vacuum have been obtained after conditioning and stressing. We have also conducted Life time tests for emission which show the films to be suitable for flat display applications. Lifetime tests show the a-Si:H emitting continuously for over 24 h. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：1101 / 1105

页数：5

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