Thermal study of Ga2Te3 chalcogenide

被引：0

作者：

Singh, DP ^{[1
]}

Upreti, UC ^{[1
]}

机构：

[1] Natl Phys Lab, New Delhi 110012, India

来源：

PHYSICS OF SEMICONDUCTOR DEVICES, VOLS 1 AND 2 | 1998年 / 3316卷

关键词：

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Results of Differential Thermal Analysis (DTA) of Ga2Te3 samples have been reported in 100 to 800 degrees C temperature range using the Perkin-Elmer DTA-1700 thermal analyser having Pt-Pt+10%Rh thermocouple. The Ga2Te3 specimens were prepared by solid melt method. X-ray diffraction has been used for structural analysis. The specimens do not experience any thermal reaction upto 440 degrees C. Behaviour of the fresh and stored specimens has been compared as regards the onset and peak temperatures for the thermal changes. It has been observed that the endothermic peak in each case is around 450 degrees C.

引用

页码：1267 / 1270

页数：4

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