Theoretical study of doping effect on electronic and magnetic properties of BaZrO3

被引:4
作者
Ben Ahmed, H. Nit [1 ]
Rami, R. [1 ,2 ]
Drissi, L. B. [1 ,2 ,3 ]
Htoutou, K. [2 ,4 ]
Laamara, R. Ahl [1 ,2 ]
机构
[1] Mohammed V Univ Rabat, Fac Sci, LPHE Modeling & Simulat, Rabat, Morocco
[2] Mohammed V Univ Rabat, Fac Sci, CPM Ctr Phys & Math, Rabat, Morocco
[3] Hassan II Acad Sci & Technol, Coll Phys & Chem Sci, Rabat, Morocco
[4] CRMEF Ctr Reg Metiers Educ & Format, Fes Meknes, Morocco
关键词
Spintronics; Electronic structure; Half -metallic ferromagnetism; Exchange mechanisms; Ab-initio calculations; ROOM-TEMPERATURE FERROMAGNETISM; PEROVSKITE OXIDES; NANOCRYSTALS; PERFORMANCE; PROGRESS; DESIGN;
D O I
10.1016/j.physb.2022.414168
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
In this work, the (D = Mo, Ru)-doping effect on the electronic and magnetic properties of BaZrO3 is investigated by means of the Korringa-Kohn-Rostoker (KKR) method in combination with the coherent potential approximation (CPA). It is shown that substituting Ba by different concentrations x of Mo and Ru impurities deals with ferromagnetic half-metallic compounds 100% spin polarization at the Fermi level. The same behavior is observed for Zr-doped configurations, except BaZr1_xMoxO3 for x > 14 which exhibits metallic character. The stability of the ferromagnetic order is attributed to double exchange mechanism. Doping induces a net moment of 1 mu B for the Ba substitution cases (Ba1_xDxZrO3) and 3 mu B for BaZr1_xDxO3 conformers. Moreover, a high curie temperature, above ambient temperature is reached for the systems. Based on these results, we have designed halfmetallic ferromagnetic compounds with high efficiency and great potential for spintronic applications.
引用
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页数:8
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