Theoretical study of doping effect on electronic and magnetic properties of BaZrO3

被引:4
|
作者
Ben Ahmed, H. Nit [1 ]
Rami, R. [1 ,2 ]
Drissi, L. B. [1 ,2 ,3 ]
Htoutou, K. [2 ,4 ]
Laamara, R. Ahl [1 ,2 ]
机构
[1] Mohammed V Univ Rabat, Fac Sci, LPHE Modeling & Simulat, Rabat, Morocco
[2] Mohammed V Univ Rabat, Fac Sci, CPM Ctr Phys & Math, Rabat, Morocco
[3] Hassan II Acad Sci & Technol, Coll Phys & Chem Sci, Rabat, Morocco
[4] CRMEF Ctr Reg Metiers Educ & Format, Fes Meknes, Morocco
关键词
Spintronics; Electronic structure; Half -metallic ferromagnetism; Exchange mechanisms; Ab-initio calculations; ROOM-TEMPERATURE FERROMAGNETISM; PEROVSKITE OXIDES; NANOCRYSTALS; PERFORMANCE; PROGRESS; DESIGN;
D O I
10.1016/j.physb.2022.414168
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
In this work, the (D = Mo, Ru)-doping effect on the electronic and magnetic properties of BaZrO3 is investigated by means of the Korringa-Kohn-Rostoker (KKR) method in combination with the coherent potential approximation (CPA). It is shown that substituting Ba by different concentrations x of Mo and Ru impurities deals with ferromagnetic half-metallic compounds 100% spin polarization at the Fermi level. The same behavior is observed for Zr-doped configurations, except BaZr1_xMoxO3 for x > 14 which exhibits metallic character. The stability of the ferromagnetic order is attributed to double exchange mechanism. Doping induces a net moment of 1 mu B for the Ba substitution cases (Ba1_xDxZrO3) and 3 mu B for BaZr1_xDxO3 conformers. Moreover, a high curie temperature, above ambient temperature is reached for the systems. Based on these results, we have designed halfmetallic ferromagnetic compounds with high efficiency and great potential for spintronic applications.
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页数:8
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