Silicon-dioxide waveguides with low birefringence

被引：26
|
作者：
de Peralta, LG [1 ]
Bernussi, AA
Temkin, H
Borhani, MM
Doucette, DE
机构：
[1] Texas Tech Univ, Nano Tech Ctr, Lubbock, TX 79409 USA
[2] X Fab Texas, Lubbock, TX 79415 USA
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 2003年 / 39卷 / 07期
关键词：
glass; multiplexing; optical waveguides; photoelasticity; polarization;
D O I：
10.1109/JQE.2003.813194
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We describe the use of highly boron-doped silicon dioxide for the preparation of optical waveguides with very low birefringence. Plasma-enhanced chemical vapor deposition was used to vary the boron content from 5 wt% to 10 wt%, at a constant phosphorus content of 4.8%. A transition from compressive to tensile stress was observed at a boron concentration of 9.1%. Pedestal-type waveguides formed with the high-boron top cladding layer show low loss of 0.02 dB/cm. Arrayed waveguide grating devices with a polarization-dependent wavelength shift of 0.01 nm and excellent stability have been demonstrated.
引用
收藏
页码：874 / 879
页数：6
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