Analysis of Dynamic Models of STT-MRAM

被引：0

作者：

Mathew, Betty Rachel ^{[1
]}

Mangai, N. M. Siva ^{[1
]}

机构：

[1] Karunya Inst Technol & Sci, Dept Elect Sci, Coimbatore, Tamil Nadu, India

来源：

2018 4TH INTERNATIONAL CONFERENCE ON DEVICES, CIRCUITS AND SYSTEMS (ICDCS) | 2018年

关键词：

Memory; Magnetic Tunnel Junction (MTJ); Spin Transfer Torque (STT); Magnetoresistive Random Access Memory (MRAM); Tunnelling Magnetoresistance (TMR) ratio; Dynamic model; LOW-POWER;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

STT-MRAM has the potential to become a universal memory owing to many advantages it has as compared to the existing memory technologies. Several models, both static as well as dynamic models have been developed amongst which dynamic models have been known to display more accurate behaviour. In this paper, we have chosen two such dynamic models already developed and available and observed and verified their transient response.

引用

页码：259 / 262

页数：4

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