Effect of aluminum addition on the optical, morphology and electrical behavior of spin coated zinc oxide thin films

被引：18

作者：

Srivastava, Amit Kumar ^{[1
]}

Kumar, Jitendra ^{[1
]}

机构：

[1] Indian Inst Technol Kanpur, Mat Sci Programme, Kanpur 208016, Uttar Pradesh, India

来源：

AIP ADVANCES | 2011年 / 1卷 / 03期

关键词：

TRANSPARENT; ZNO;

D O I：

10.1063/1.3640406

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Aluminum-doped ZnO thin films of high optical transmittance (similar to 84-100%) and low resistivity (similar to 2.3x10(-2) Omega cm) have been prepared on glass substrate by the spin coating and subsequent annealing at 500 degrees C for 1h in air or vacuum. Effect of aluminum doping and annealing environment on morphology, optical transmittance and electrical resistivity of ZnO thin films has been studied with possible application as a transparent electrode in photovoltaic. The changes occurring due to aluminum addition include reduction in grain size, root mean square roughness, peak-valley separation, and sheet resistance with improvement in the optical transmittance to 84-100% in the visible range. The origin of low electrical resistivity lies in increase in i) electron concentration following aluminum doping (being trivalent), formation of oxygen vacancies due to vacuum annealing, filling of cation site with additional zinc at solution stage itself and ii) carrier mobility. Copyright 2011 Author(s). This article is distributed under a Creative Commons Attribution 3.0 Unported License. [doi: 10.1063/1.3640406]

引用

页数：10

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