Spin-polarized transport in GaMnAs multilayers

被引：25
作者：
da Silva, LL
Boselli, MA
Lima, ICD
Wang, XF
Ghazali, A
机构：
[1] Univ Estado Rio de Janeiro, Inst Fis, BR-20500013 Rio De Janeiro, Brazil
[2] Concordia Univ, Dept Phys, Montreal, PQ H3G 1M8, Canada
[3] Univ Paris 07, CNRS, UMR 7588, Phys Solides Grp, F-75251 Paris, France
[4] Univ Paris 06, CNRS, UMR 7588, Phys Solides Grp, F-75251 Paris 05, France
来源：
APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 20期
关键词：
D O I：
10.1063/1.1415407
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The spin-dependent mobility for the lateral transport of the hole gas in a GaMnAs/GaAs heterostructure containing several metallic-like ferromagnetic layers is calculated. The electronic structure is obtained self-consistently taking into account the direct Coulomb Hartree and exchange-correlation terms, besides the sp-d exchange interaction with the Mn magnetic moments.(C) 2001 American Institute of Physics.
引用
收藏
页码：3305 / 3307
页数：3
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