Mechanisms of damage formation in Eu-implanted GaN probed by X-ray diffraction

被引：40

作者：

Lacroix, B. ^{[1
]}

Leclerc, S. ^{[1
]}

Declemy, A. ^{[2
]}

Lorenz, K. ^{[3
]}

Alves, E. ^{[3
]}

Ruterana, P. ^{[1
]}

机构：

[1] ENSICAEN, CIMAP, CNRS, CEA,UCBN,UMR 6252, F-14050 Caen 4, France

[2] Univ Poitiers, Inst Pprime, CNRS, ENSMA,UPR 3346, F-86962 Futuroscope, France

[3] Inst Tecnol & Nucl, P-2686953 Sacavem, Portugal

来源：

EPL | 2011年 / 96卷 / 04期

关键词：

ION-IMPLANTATION; ATOMIC CONFIGURATIONS; EXTENDED DEFECTS; STACKING-FAULT; THIN-FILMS; SEMICONDUCTORS; NITRIDES;

D O I：

10.1209/0295-5075/96/46002

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

At low fluence, 300 keV Eu implantation in GaN leads to a strain increase followed by a saturation as observed by X-ray diffraction, while Rutherford backscattering/channeling remains insensitive to the radiation damage. Based on transmission electron microscopy, this saturation regime is attributed to a damaged region in the crystal bulk in which interaction between point defects and stacking faults (SFs) occurs, leading to the densification of the network of planar defects by the trapping of point defects. At higher fluences, above 2x10(14) Eu/cm(2), the evolutions of strain state in another region and of the microstructure as observed by TEM indicate a modification of the degradation mechanisms which now involve a migration of point defects out of the region of SFs. This results in the formation of a highly strained area below the region of SFs made up of large point defect clusters, and in the extension of the SFs network towards the surface that eventually leads to its nanocrystallization. Copyright (C) EPLA, 2011

引用

页数：5

共 23 条

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