Layer-by-Layer Graphene Growth on β-SiC/Si(001)

被引：16

作者：

Aristov, Victor Yu. ^{[1
,2
]}

Chaika, Alexander N. ^{[2
,3
]}

Molodtsova, Olga V. ^{[1
,4
]}

Babenkov, Sergey V. ^{[1
,5
]}

Locatelli, Andrea ^{[6
]}

Mentes, Tevfik Onur ^{[6
]}

Sala, Alessandro ^{[6
,9
,10
]}

Potorochin, Dmitrii ^{[1
,4
,7
]}

Marchenko, Dmitry ^{[8
]}

Murphy, Barry ^{[3
]}

Walls, Brian ^{[3
]}

Zhussupbekov, Kuanysh ^{[3
]}

Shvets, Igor V. ^{[3
]}

机构：

[1] Deutsch Elektronen Synchrotron DESY, Notkestr 85, D-22607 Hamburg, Germany

[2] Russian Acad Sci, Inst Solid State Phys, 2 Academician Ossipyan St, Chernogolovka 142432, Moscow District, Russia

[3] Trinity Coll Dublin, Sch Phys, CRANN, Dublin 2, Ireland

[4] Natl Res Univ Informat Technol Mech & Opt, Kronverksky Prospekt 49, St Petersburg 197101, Russia

[5] Johannes Gutenberg Univ Mainz, Inst Phys, Staudingerweg 7, D-55099 Mainz, Germany

[6] Elettra Sincrotrone Trieste SCpA, SS 14 Km 163-5 AREA Sci Pk, I-34149 Trieste, Italy

[7] TU Bergakad Freiberg, Inst Expt Phys, Leipziger Str 23, D-09599 Freiberg, Germany

[8] Helmholtz Zentrum Berlin Mat & Energie, Albert Einstein Str 15, D-12489 Berlin, Germany

[9] Univ Trieste, Dept Phys, Via Valerio 2, I-34127 Trieste, Italy

[10] CNR IOM, SS 14 Km 163-5 AREA Sci Pk, I-34149 Trieste, Italy

来源：

ACS NANO | 2019年 / 13卷 / 01期

基金：

爱尔兰科学基金会; 俄罗斯基础研究基金会;

关键词：

graphene; nanodomains; beta-SiC; ARPES; LEEM; mu-LEED; XPS; X-RAY PHOTOEMISSION; BETA-SIC(100) SURFACE; ELECTRONIC-PROPERTIES; EPITAXIAL GRAPHENE; GRAPHITIZATION; TEMPERATURE; TRANSITION; GRAPHITE;

D O I：

10.1021/acsnano.8b07237

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The mechanism of few-layer graphene growth on the technologically relevant cubic-SiC/Si(001) substrate is uncovered using high-resolution core-level and angle-resolved photoelectron spectroscopy, low-energy electron microscopy, and microspot low-energy electron diffraction. The thickness of the graphitic overlayer supported on the silicon carbide substrate and related changes in the surface structure are precisely controlled by monitoring the progress of the surface graphitization in situ during high-temperature graphene synthesis, using a combination of microspectroscopic techniques. The experimental data reveal gradual changes in the preferential graphene lattice orientations at the initial stages of the few-layer graphene growth on SiC(001) and can act as reference data for controllable growth of single-, double-, and triple-layer graphene on silicon carbide substrates.

引用

页码：526 / 535

页数：10

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