Quantum Dot Based Semiconductor Disk Lasers for 1-1.3 μm

被引:35
作者
Butkus, Mantas [1 ]
Rautiainen, Jussi [2 ]
Okhotnikov, Oleg G. [2 ]
Hamilton, Craig J. [3 ]
Malcolm, G. P. A. [4 ]
Mikhrin, S. S. [5 ]
Krestnikov, Igor L. [5 ]
Livshits, D. A. [5 ]
Rafailov, Edik U. [1 ]
机构
[1] Univ Dundee, Sch Engn Phys & Math, Dundee DD1 4HN, Scotland
[2] Tampere Univ Technol, Optoelect Res Ctr, Tampere 33720, Finland
[3] Solus Technol Ltd, Glasgow G20 0XA, Lanark, Scotland
[4] M Sq Lasers Ltd, Glasgow G20 0XA, Lanark, Scotland
[5] Innolume GmbH, D-44263 Dortmund, Germany
关键词
Continuous wave (CW); infrared (IR); quantum dots (QDs); semiconductor disk lasers (SDLs); POWER; EMISSION; GAAS;
D O I
10.1109/JSTQE.2011.2112638
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Optically pumped quantum dot (QD)-based semiconductor disk lasers (SDLs) have been under intense research after their first demonstration and important enhancements of their parameters have been achieved since then. In this paper, we present recent developments in QD-based SDLs emitting in the 1-1.3 mu m spectral region. Three different wavelength ranges of 1040, 1180, and 1260 nm were explored. Power scaling up to 6 W was achieved for 1040 and 1180 nm devices and up to 1.6 W for 1260 nm device. New spectral regions were covered by direct emission and frequency doubling was used to demonstrate spectral conversion into visible region with green, orange, and red light. Also, the broad gain bandwidth of QD materials was explored and wavelength tuneability up to 60 nm around 1040 nm, 69 nm around 1180 nm, and 25 nm around 1260 nm was demonstrated. The efficiency of excited and ground state emission in QDs was also compared. All these improvements allow new possibilities in applications of QD SDLs, reveal their potential, and suggest the aims for future research in the field.
引用
收藏
页码:1763 / 1771
页数:9
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