A Low-Noise CMOS SPAD Pixel With 12.1 Ps SPTR and 3 Ns Dead Time

被引:58
作者
Gramuglia, Francesco [1 ]
Wu, Ming-Lo [1 ]
Bruschini, Claudio [1 ]
Lee, Myung-Jae [2 ]
Charbon, Edoardo [1 ]
机构
[1] Ecole Polytech Fed Lausanne EPFL, Adv Quantum Architecture Lab AQUA, CH-2002 Neuchatel, Switzerland
[2] Korea Inst Sci & Technol KIST, Postsilicon Semicond Inst, Seoul 02792, South Korea
基金
瑞士国家科学基金会;
关键词
Single-photon avalanche diodes; Temperature measurement; Voltage measurement; Sensitivity; CMOS technology; Transistors; Delays; Active reset; cascode; jitter; low noise; low power; photon detection probability (PDP); pixel; quantum key distribution (QKD); single-photon avalanche diode (SPAD); timing; PHOTON AVALANCHE-DIODE; DETECTION EFFICIENCY; TECHNOLOGY; DETECTOR; PHOTODIODES; RESOLUTION;
D O I
10.1109/JSTQE.2021.3088216
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Single-photon avalanche diodes (SPADs) have become the sensor of choice inmany applications whenever high sensitivity, low noise, and sharp timing performance are required, simultaneously. Recently, SPADs designed in CMOS technology, have yielded moderately good performance in these parameters, but never equaling their counterparts fabricated in highly customized, non-standard technologies. The arguments in favor of CMOScompatible SPADs were miniaturization, cost and scalability. In this paper, we present the first CMOS SPAD with performance comparable or better than that of the best custom SPADs, to date. The SPAD-based design, fully integrated in 180 nm CMOS technology, achieves a peak photon detection probability (PDP) of 55% at 480 nm with a very broad spectrum spanning from near ultraviolet (NUV) to near infrared (NIR) and a normalized dark count rate (DCR) of 0.2 cps/mu m(2), both at 6 V of excess bias. Thanks to a dedicated CMOS pixel circuit front-end, an afterpulsing probability of about 0.1% at a dead time of similar to 3 ns were achieved. We designed three SPADs with a diameter of 25, 50, and 100 mu m to study the impact of size on the timing jitter and to create a scaling law for SPADs. For these SPADs, a single-photon time resolution (SPTR) of 12.1 ps, 16 ps, and 27 ps (FWHM) was achieved at 6 V of excess bias, respectively. The SPADs operate in a wide range of temperatures, from -65 degrees C to 40.C, reaching a normalizedDCRof 1.6 mcps/mu m(2) at 6Vof excess bias for the 25 mu m at-65 degrees C. The proposed SPADs are ideal for a wide range of applications, including (quantum) LiDAR, super-resolution microscopy, quantum random number generators, quantum key distribution, fluorescence lifetime imaging, time-resolved Raman spectroscopy, to name a few. All these applications can take advantage of the vastly improved performance of our detectors, while enjoying the opportunities of megapixel resolutions promised by the economy of scale that is offered by CMOS technologies.
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页数:9
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