Improvement of retention loss in Pb(Zr,Ti)O3 capacitors using Ir/SrRuO3 top electrodes -: art. no. 212910

被引：22

作者：

Kim, S ^{[1
]}

Koo, J ^{[1
]}

Shin, S ^{[1
]}

Park, Y ^{[1
]}

机构：

[1] Samsung Adv Inst Technol, Devices Lab, Suwon 440600, South Korea

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 21期

关键词：

D O I：

10.1063/1.2135898

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated the retention behavior of Pb(Zr,Ti)O-3 (PZT) capacitors with Ir/SrRuO3 (SRO) top electrodes. The capacitors with Pt and Ir/IrO2 top electrodes were also prepared for comparison. The opposite state retention characteristic of the PZT capacitor was significantly improved by using an Ir/SRO top electrode structure. The nonvolatile polarization of the opposite state retention was kept at 96% of its initial value even after a 100 h baking test at 150 degrees C, while those of Pt and Ir/IrO2 were 36 and 59%, respectively. The retention enhancement is attributed to the effective inhibition of defect generation on the interface between PZT and SRO. (c) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

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