In situ passivation of GaAsP nanowires

被引：31

作者：

Himwas, C. ^{[1
]}

Collin, S. ^{[2
]}

Rale, P. ^{[2
]}

Chauvin, N. ^{[3
]}

Patriarche, G. ^{[2
]}

Oehler, F. ^{[2
]}

Julien, F. H. ^{[1
]}

Travers, L. ^{[2
]}

Harmand, J-C ^{[2
]}

Tchernycheva, M. ^{[1
]}

机构：

[1] Univ Paris Saclay, Univ Paris Sud, CNRS, UMR 9001,Ctr Nanosci & Nanotechnol Site Orsay, Bat 220,Rue Andre Ampere, F-91405 Orsay, France

[2] Univ Paris Saclay, Univ Paris Sud, CNRS, UMR 9001,Ctr Nanosci & Nanotechnol Site Marcous, Route Nozay, F-91460 Marcoussis, France

[3] Univ Lyon, INL, CNRS, UMR 5270,INSA Lyon, 7 Ave Jean Capelle, F-69621 Villeurbanne, France

来源：

NANOTECHNOLOGY | 2017年 / 28卷 / 49期

基金：

欧洲研究理事会;

关键词：

nanowire; molecular beam epitaxy (MBE); photoluminescence; GaAsP/Ga(As)P; in situ passivation; SOLAR-CELLS; EFFICIENCY; SHELL; GAS; GROWTH;

D O I：

10.1088/1361-6528/aa9533

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report on the structural and optical properties of GaAsP nanowires (NWs) grown by molecularbeamepitaxy. By adjusting the alloy composition in theNWs, the transition energy was tuned to the optimal value required for tandem III-V/silicon solar cells. We discovered that an unintentional shell was also formed during the GaAsP NW growth. The NW surface was passivated by an in situ deposition of a radial Ga(As) P shell. Different shell compositions and thicknesses were investigated. We demonstrate that the optimal passivation conditions for GaAsP NWs (with a gap of 1.78 eV) are obtained with a 5 nm thick GaP shell. This passivation enhances the luminescence intensity of the NWs by 2 orders of magnitude and yields a longer luminescence decay. The luminescence dynamics changes from single exponential decay with a 4 ps characteristic time in non-passivated NWs to a biexponential decay with characteristic times of 85 and 540 ps in NWs with GaP shell passivation.

引用

页数：11

共 47 条

[31] FREE-EXCITON TRANSITIONS IN OPTICAL-ABSORPTION SPECTRA OF GAAS1-XPX [J].