Measuring the junction temperature of III-nitride light emitting diodes using electro-luminescence shift

被引：54
作者：
Cho, JH
Sone, C
Park, Y
Yoon, E
机构：
[1] Samsung Adv Inst Technol, Photon Program Team, Suwon 440600, South Korea
[2] Seoul Natl Univ, Sch Mat Sci & Engn, Seoul 151742, South Korea
[3] Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 151742, South Korea
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2005年 / 202卷 / 09期
关键词：
D O I：
10.1002/pssa.200520041
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The junction temperature rise of light emitting diodes due to self-heating effects during operation of the LED is measured using the electro-luminescence of the band-to-band recombination. This method is useful for the junction temperature monitoring of small geometry devices, indirectly. The junction temperature measured in InGaN/GaN multi-quantum well LEDs with 1 mm(2) device size rises to 180 degrees C when the input current is 380 mA. The relationship between the junction temperature and the LED efficiency is clarified with experimental results.
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页码：1869 / 1873
页数：5
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