Monolithic Integration of 2-D Multimode Interference Couplers and Silicon Photonic Wires

被引：6

作者：

Chiu, Wei-Chao ^{[1
]}

Lu, Cheng-Yen ^{[1
]}

Lee, Ming-Chang M. ^{[1
,2
,3
]}

机构：

[1] Natl Tsing Hua Univ, Inst Photon Technol, Hsinchu 30013, Taiwan

[2] Natl Tsing Hua Univ, Dept Elect Engn, Hsinchu 30013, Taiwan

[3] Natl Tsing Hua Univ, Inst NanoEngn & MicroSyst, Hsinchu 30013, Taiwan

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2011年 / 17卷 / 03期

关键词：

Hydrogen annealing; integrated optics; optical device fabrication; silicon-on-insulator (SOI) technology; PROFILE TRANSFORMATION; FABRICATION; BANDWIDTH;

D O I：

10.1109/JSTQE.2010.2069086

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Anew technology using hydrogen annealing and thermal oxidation is proposed to fabricate a very compact 2-D multimode interference coupler monolithically integrated with two-layer silicon photonic wires. Two devices, a 1 x 1 cross-power coupler and a 1 x 2(2) power splitter, are presented and characterized. The experimental result shows that a 3-dB transmission bandwidth of 1.1 nm, and the on-chip coupler losses of 8.6 dB and 2.84 dB were accomplished for the 1 x 1 cross-power coupler and the 1 x 2(2) power splitter. This paper demonstrates the possibility of realizing 3-D photonic integration for silicon-on-insulator lightwave circuits.

引用

页码：540 / 545

页数：6

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