Nonvolatile Negative Optoelectronic Memory Based on Ferroelectric Thin Films

被引：16

作者：

Yang, Nan ^{[1
]}

Hu, Chuan-Zhu ^{[1
]}

Ren, Zhong-Qi ^{[1
]}

Bao, Si-Yao ^{[1
]}

Tian, Bo Bo ^{[1
]}

Yue, Fangyu ^{[1
]}

Xiang, Ping-Hua ^{[1
,2
]}

Zhong, Ni ^{[1
,2
]}

Duan, Chun-Gang ^{[1
,2
]}

Chu, Jun-Hao ^{[1
,2
]}

机构：

[1] East China Normal Univ, Dept Elect, Key Lab Polar Mat & Devices MOE, Shanghai 200241, Peoples R China

[2] Shanxi Univ, Collaborat Innovat Ctr Extreme Opt, Taiyuan 030006, Shanxi, Peoples R China

来源：

ACS APPLIED ELECTRONIC MATERIALS | 2020年 / 2卷 / 04期

基金：

中国国家自然科学基金;

关键词：

BFO thin films; negative photoconductivity effect; nonvolatile optoelectronic memory; annealing interface effect;

D O I：

10.1021/acsaelm.0c00066

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Optically triggered nonvolatile memory is demonstrated in an indium tin oxide (ITO)/BiFeO3 (BFO)/SrRuO3 (SRO) heterostructure. In contrast to conventional devices where optical excitations typically enhance conduction, the prepared device exhibits a pronounced decrease in conductivity (1 x 10(-4)) after laser illumination at wavelengths of 405, 532, and 1064 nm. Also, the negative optoelectronic memory could be reset using optical stimuli and set using an electrical pulse. This characteristic was suppressed through annealing in an oxygen-rich atmosphere, and then reappeared after annealing in an oxygen-poor atmosphere. Systematic investigations on the transport and dielectric properties show that the observed controllable optical/electrical resistance switching behavior is attributed to a modulation of the potential profile at the ITO/BFO interface due to optical and electrical excitations. These observations indicate a feasible avenue for future generations of nonvolatile optoelectronic memory devices.

引用

页码：1035 / 1040

页数：6

共 39 条

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