Thermoelectric properties of Bi0.5Sb1.5Te3 thin films grown by pulsed laser deposition

被引:19
作者
Symeou, E. [1 ]
Pervolaraki, M. [1 ]
Mihailescu, C. N. [1 ,2 ]
Athanasopoulos, G. I. [1 ]
Papageorgiou, Ch. [1 ]
Kyratsi, Th. [1 ]
Giapintzakis, J. [1 ]
机构
[1] Univ Cyprus, Nanotechnol Res Ctr, CY-1678 Nicosia, Cyprus
[2] Natl Inst Laser Plasma & Radiat Phys, Magurele 077125, Romania
关键词
Pulsed laser deposition; Bismuth-antimony telluride; Thermoelectric properties; Thin films; TRANSPORT-PROPERTIES; BI2TE2.7SE0.3; TEMPERATURE;
D O I
10.1016/j.apsusc.2014.10.038
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We report on the pulsed laser deposition of p-type Bi0.5Sb1.5Te3 thin films onto fused silica substrates by ablation of dense targets of Bi0.5Sb1.5Te3 with an excess of 1 wt% Te. We investigated the effect of film thickness, substrate temperature and post-annealing duration on the thermoelectric properties of the films. Our results show that the best power factor (2780 mu W/K(2)m at 300K) is obtained for films grown at room temperature and then post-annealed in vacuum at 300 degrees C for 16 h. This is among the highest power factor values reported for Bi0.5Sb1.5Te3 films grown on fused silica substrates. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码:138 / 142
页数:5
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