Thermoelectric properties of Bi0.5Sb1.5Te3 thin films grown by pulsed laser deposition

被引：19

作者：

Symeou, E. ^{[1
]}

Pervolaraki, M. ^{[1
]}

Mihailescu, C. N. ^{[1
,2
]}

Athanasopoulos, G. I. ^{[1
]}

Papageorgiou, Ch. ^{[1
]}

Kyratsi, Th. ^{[1
]}

Giapintzakis, J. ^{[1
]}

机构：

[1] Univ Cyprus, Nanotechnol Res Ctr, CY-1678 Nicosia, Cyprus

[2] Natl Inst Laser Plasma & Radiat Phys, Magurele 077125, Romania

来源：

APPLIED SURFACE SCIENCE | 2015年 / 336卷

关键词：

Pulsed laser deposition; Bismuth-antimony telluride; Thermoelectric properties; Thin films; TRANSPORT-PROPERTIES; BI2TE2.7SE0.3; TEMPERATURE;

D O I：

10.1016/j.apsusc.2014.10.038

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We report on the pulsed laser deposition of p-type Bi0.5Sb1.5Te3 thin films onto fused silica substrates by ablation of dense targets of Bi0.5Sb1.5Te3 with an excess of 1 wt% Te. We investigated the effect of film thickness, substrate temperature and post-annealing duration on the thermoelectric properties of the films. Our results show that the best power factor (2780 mu W/K(2)m at 300K) is obtained for films grown at room temperature and then post-annealed in vacuum at 300 degrees C for 16 h. This is among the highest power factor values reported for Bi0.5Sb1.5Te3 films grown on fused silica substrates. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：138 / 142

页数：5

共 15 条

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