Band gaps of wurtzite ScxGa1-xN alloys

被引：20

作者：

Tsui, H. C. L. ^{[1
]}

Goff, L. E. ^{[1
,2
]}

Rhode, S. K. ^{[3
]}

Pereira, S. ^{[4
,5
]}

Beere, H. E. ^{[2
]}

Farrer, I. ^{[2
]}

Nicoll, C. A. ^{[2
]}

Ritchie, D. A. ^{[2
]}

Moram, M. A. ^{[1
]}

机构：

[1] Univ London Imperial Coll Sci Technol & Med, Dept Mat, London SW7 2AZ, England

[2] Univ Cambridge, Dept Phys, Cambridge CB3 0HE, England

[3] Univ Cambridge, Dept Mat Sci & Met, Cambridge CB3 0FS, England

[4] Univ Aveiro, CICECO, P-3810193 Aveiro, Portugal

[5] Univ Aveiro, Dept Phys, P-3810193 Aveiro, Portugal

来源：

APPLIED PHYSICS LETTERS | 2015年 / 106卷 / 13期

基金：

英国工程与自然科学研究理事会;

关键词：

LIGHT-EMITTING-DIODES; ELECTRONIC-PROPERTIES; CUBIC GAN; SCGAN; FILMS; SCN; MICROSTRUCTURE; SPECTRA; SCAS;

D O I：

10.1063/1.4916679

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Optical transmittance measurements on epitaxial, phase-pure, wurtzite-structure ScxGa1-xN films with 0 <= x <= 0.26 showed that their direct optical band gaps increased from 3.33 eV to 3.89 eV with increasing x, in agreement with theory. These films contained I-1- and I-2-type stacking faults. However, the direct optical band gaps decreased from 3.37 eV to 3.26 eV for ScxGa1-xN films, which additionally contained nanoscale lamellar inclusions of the zinc-blende phase, as revealed by aberration-corrected scanning transmission electron microscopy. Therefore, we conclude that the apparent reduction in ScxGa1-xN band gaps with increasing x is an artefact resulting from the presence of nanoscale zinc-blende inclusions. (C) 2015 AIP Publishing LLC.

引用

页数：3

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