Microscopic simulation of semiconductor laser devices

被引：3
|
作者：
Bueckers, Christina [1 ,2 ]
Hader, Jorg [3 ,4 ]
Moloney, Jerome V. [3 ,4 ]
Koch, Stephan W. [1 ,2 ]
机构：
[1] Philipps Univ Marburg, Dept Phys, Renthof 5, D-35032 Marburg, Germany
[2] Philipps Univ Marburg, Mat Sci Ctr, D-35032 Marburg, Germany
[3] Nonlinear Control Strategies Inc, Tucson, AZ 85705 USA
[4] Univ Arizona, Coll Opt Sci, Tucson, AZ 85721 USA
来源：
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 9 | 2011年 / 8卷 / 09期
关键词：
semiconductor lasers; microscopic laser modeling; semiconductor gain media; quantum well systems; SPONTANEOUS EMISSION; DIODE-LASERS; GAIN; LUMINESCENCE; GAN(X)AS1-X; DESIGN;
D O I：
10.1002/pssc.201084137
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
This paper reviews the application of a systematic microscopic theory for the optical and electronic properties of semiconductors. The theory is applied to quantitatively model and analyze different semiconductor systems. Detailed theory-experiment comparisons are shown for a variety of quantum well gain materials. It is demonstrated how the analysis can be used to aid in the design of modern semiconductor laser devices. (c) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：2558 / 2563
页数：6
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