Microscopic simulation of semiconductor laser devices

被引：3

作者：

Bueckers, Christina ^{[1
,2
]}

Hader, Jorg ^{[3
,4
]}

Moloney, Jerome V. ^{[3
,4
]}

Koch, Stephan W. ^{[1
,2
]}

机构：

[1] Philipps Univ Marburg, Dept Phys, Renthof 5, D-35032 Marburg, Germany

[2] Philipps Univ Marburg, Mat Sci Ctr, D-35032 Marburg, Germany

[3] Nonlinear Control Strategies Inc, Tucson, AZ 85705 USA

[4] Univ Arizona, Coll Opt Sci, Tucson, AZ 85721 USA

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 9 | 2011年 / 8卷 / 09期

关键词：

semiconductor lasers; microscopic laser modeling; semiconductor gain media; quantum well systems; SPONTANEOUS EMISSION; DIODE-LASERS; GAIN; LUMINESCENCE; GAN(X)AS1-X; DESIGN;

D O I：

10.1002/pssc.201084137

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper reviews the application of a systematic microscopic theory for the optical and electronic properties of semiconductors. The theory is applied to quantitatively model and analyze different semiconductor systems. Detailed theory-experiment comparisons are shown for a variety of quantum well gain materials. It is demonstrated how the analysis can be used to aid in the design of modern semiconductor laser devices. (c) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：2558 / 2563

页数：6

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