Oxide-Based Electric-Double-Layer Thin-Film Transistors on a Flexible Substrate

被引：30

作者：

Cai, Wensi ^{[1
]}

Zhang, Jiawei ^{[1
]}

Wilson, Joshua ^{[1
]}

Ma, Xiaochen ^{[1
]}

Wang, Hanbin ^{[2
]}

Zhang, Xijian ^{[2
]}

Xin, Qian ^{[2
]}

Song, Aimin ^{[1
]}

机构：

[1] Univ Manchester, Sch Elect & Elect Engn, Manchester M13 9PL, Lancs, England

[2] Shandong Univ, Sch Microelect, Ctr Nanoelect, Jinan 250100, Shandong, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2017年 / 38卷 / 12期

基金：

英国工程与自然科学研究理事会; 中国国家自然科学基金;

关键词：

Electric-double-layer (EDL); flexible thinfilm transistors (TFTs); radio-frequency magnetron sputtered SiO2; InGaZnO; FIELD-EFFECT TRANSISTORS; LOW-VOLTAGE; HIGH-PERFORMANCE; HIGH-K; TRANSPARENT; NANOCOMPOSITE; ILLUMINATION; ELECTROLYTE; DIELECTRICS; GLASS;

D O I：

10.1109/LED.2017.2768822

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Flexible electric-double-layer (EDL) InGaZnO thin-film transistors (TFTs) were fabricated on a plastic substrate at room temperature. A large EDL gate capacitance, 0.22 mu F/cm(2), at 20 Hz was achieved using 200-nm-thick radio frequency magnetron sputtered porous SiO2 as the dielectric layer, which is equivalent to similar to 15.7-nm thermally grown SiO2. The devices, therefore, show a low operating voltage of 1 V, a high current ON-OFF ratio > 10(5), and a low subthreshold swing < 0.12 V/decade. These properties were maintained even after bending, suggesting that the TFTs are suitable for applications in portable sensors and rollable displays.

引用

页码：1680 / 1683

页数：4

共 39 条

[31] Challenges and performance limitations of high-k and oxynitride gate dielectrics for 90/65 nm CMOS technology [J].

Tan, S. Y. .

MICROELECTRONICS JOURNAL, 2007, 38 (6-7) :783-786

[32] High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering [J].

Yabuta, Hisato ;

Sano, Masafumi ;

Abe, Katsumi ;

Aiba, Toshiaki ;

Den, Tohru ;

Kumomi, Hideya ;

Nomura, Kenji ;

Kamiya, Toshio ;

Hosono, Hideo .

APPLIED PHYSICS LETTERS, 2006, 89 (11)

[33] A self-ordered, crystalline glass, mesoporous nanocomposite with high proton conductivity of 2 x 10-2 S cm-1 at intermediate temperature [J].

Yamada, M ;

Li, DL ;

Honma, I ;

Zhou, HS .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2005, 127 (38) :13092-13093

[34] Low-voltage organic field-effect transistors and inverters enabled by ultrathin cross-linked polymers as gate dielectrics [J].

Yoon, MH ;

Yan, H ;

Facchetti, A ;

Marks, TJ .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2005, 127 (29) :10388-10395

[35] High-Density Carrier Accumulation in ZnO Field-Effect Transistors Gated by Electric Double Layers of Ionic Liquids [J].

Yuan, Hongtao ;

Shimotani, Hidekazu ;

Tsukazaki, Atsushi ;

Ohtomo, Akira ;

Kawasaki, Masashi ;

Iwasa, Yoshihiro .

ADVANCED FUNCTIONAL MATERIALS, 2009, 19 (07) :1046-1053

[36] Performance regeneration of InGaZnO transistors with ultra-thin channels [J].

Zhang, Binglei ;

Li, He ;

Zhang, Xijian ;

Luo, Yi ;

Wang, Qingpu ;

Song, Aimin .

APPLIED PHYSICS LETTERS, 2015, 106 (09)

[37] High performance ZnO-thin-film transistor with Ta2O5 dielectrics fabricated at room temperature [J].

Zhang, L. ;

Li, J. ;

Zhang, X. W. ;

Jiang, X. Y. ;

Zhang, Z. L. .

APPLIED PHYSICS LETTERS, 2009, 95 (07)

[38] Nanoelectronics - Negative capacitance to the rescue? [J].

Zhirnov, Victor V. ;

Cavin, Ralph K. .

NATURE NANOTECHNOLOGY, 2008, 3 (02) :77-78

[39] Low voltage and high ON/OFF ratio field-effect transistors based on CVD MoS2 and ultra high-k gate dielectric PZT [J].

Zhou, Changjian ;

Wang, Xinsheng ;

Raju, Salahuddin ;

Lin, Ziyuan ;

Villaroman, Daniel ;

Huang, Baoling ;

Chan, Helen Lai-Wa ;

Chan, Mansun ;

Chai, Yang .

NANOSCALE, 2015, 7 (19) :8695-8700

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