Oxide-Based Electric-Double-Layer Thin-Film Transistors on a Flexible Substrate

被引：30

作者：

Cai, Wensi ^{[1
]}

Zhang, Jiawei ^{[1
]}

Wilson, Joshua ^{[1
]}

Ma, Xiaochen ^{[1
]}

Wang, Hanbin ^{[2
]}

Zhang, Xijian ^{[2
]}

Xin, Qian ^{[2
]}

Song, Aimin ^{[1
]}

机构：

[1] Univ Manchester, Sch Elect & Elect Engn, Manchester M13 9PL, Lancs, England

[2] Shandong Univ, Sch Microelect, Ctr Nanoelect, Jinan 250100, Shandong, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2017年 / 38卷 / 12期

基金：

英国工程与自然科学研究理事会; 中国国家自然科学基金;

关键词：

Electric-double-layer (EDL); flexible thinfilm transistors (TFTs); radio-frequency magnetron sputtered SiO2; InGaZnO; FIELD-EFFECT TRANSISTORS; LOW-VOLTAGE; HIGH-PERFORMANCE; HIGH-K; TRANSPARENT; NANOCOMPOSITE; ILLUMINATION; ELECTROLYTE; DIELECTRICS; GLASS;

D O I：

10.1109/LED.2017.2768822

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Flexible electric-double-layer (EDL) InGaZnO thin-film transistors (TFTs) were fabricated on a plastic substrate at room temperature. A large EDL gate capacitance, 0.22 mu F/cm(2), at 20 Hz was achieved using 200-nm-thick radio frequency magnetron sputtered porous SiO2 as the dielectric layer, which is equivalent to similar to 15.7-nm thermally grown SiO2. The devices, therefore, show a low operating voltage of 1 V, a high current ON-OFF ratio > 10(5), and a low subthreshold swing < 0.12 V/decade. These properties were maintained even after bending, suggesting that the TFTs are suitable for applications in portable sensors and rollable displays.

引用

页码：1680 / 1683

页数：4

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