Annealing effect on electrical properties of high-k MgZnO film on silicon

被引：15

作者：

Liang, J ^{[1
]}

Wu, HZ

Chen, NB

Xu, TN

机构：

[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China

[2] Zhejiang Univ, Dept Phys, Hangzhou 310027, Peoples R China

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2005年 / 20卷 / 05期

关键词：

D O I：

10.1088/0268-1242/20/5/L01

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Cubic crystalline MgZnO was grown on p-type Si (0 0 1) by a reactive e-beam evaporation system at low temperature. AES depth profiles for the MgZnO films demonstrate good uniformity of Mg, Zn and O components. MIS capacitors were fabricated and C-V and I-V characterizations were performed to evaluate the annealing effect on electrical properties of MgZnO films. High temperature annealing up to 900 degrees C under O-2 ambient significantly improves C-V and I-V characteristics. The interface trapped charges decrease from 5.30 x 10(12) cm(-2) to 2.48 x 10(11) cm(-2) as the annealing temperature increases from 550 degrees C to 900 degrees C, indicating the quality improvement of the interfacial layer. Meanwhile the density of mobile charges increases from 1.93 x 10(10) cm(-2) to 1.72 x 10(11) cm(-2) as the annealing temperature increases from 550 degrees C to 900 degrees C, which is attributed to the evaporation of O near the surface and migration of Zn2+ towards the surface from MgZnO alloy film under such high temperatures.

引用

页码：L15 / L19

页数：5

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