A Top-down Approach to Fabrication of High Quality Vertical Heterostructure Nanowire Arrays

被引：41
作者：
Wang, Hua [1 ]
Sun, Minghua [1 ]
Ding, Kang [1 ]
Hill, Martin T. [2 ]
Ning, Cun-Zheng [1 ]
机构：
[1] Arizona State Univ, Sch Elect Comp & Energy Engn, Tempe, AZ 85281 USA
[2] Eindhoven Univ Technol, COBRA Res Inst, NL-5600 MB Eindhoven, Netherlands
来源：
NANO LETTERS | 2011年 / 11卷 / 04期
关键词：
Reactive ion etching; photoluminescence linewidth; semiconductor nanowires; longitudinal heterostructure; top-down fabrication; self-masking; INP; SILICON; GROWTH;
D O I：
10.1021/nl2001132
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
We demonstrate a novel top-down approach for fabricating nanowires with unprecedented complexity and optical quality by taking advantage of a nanoscale self masking effect. We realized vertical arrays of nanowires of 20-40 nm in diameter with 16 segments of. complex longitudinal InGaAsP/InP structures. The unprecedented high quality of etched wires is evidenced by the narrowest photoluminescence linewidth ever produced in similar wavelengths, indistinguishable from that of the corresponding wafer. This top down, mask free, large scale approach is compatible with the established device fabrication processes and could serve as an important alternative to the bottom up approach, significantly expanding ranges and varieties of applications of nanowire technology.
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收藏
页码：1646 / 1650
页数：5
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