Growth mechanism of immobilized WO3 nanostructures in different solvents and their visible-light photocatalytic performance

被引:31
作者
Fan, Youshu [1 ]
Xi, Xiaoli [1 ,2 ]
Liu, Yangsi [1 ,3 ]
Nie, Zuoren [1 ,2 ]
Zhang, Qinghua [1 ]
Zhao, Linyan [1 ]
机构
[1] Beijing Univ Technol, Coll Mat Sci & Engn, Key Lab Adv Funct Mat, Educ Minist China, Beijing 100124, Peoples R China
[2] Beijing Univ Technol, Natl Engn Lab Ind Big Data Applicat Technol, Beijing 100124, Peoples R China
[3] Beijing Univ Technol, Beijing Guyue New Mat Res Inst, Beijing 100124, Peoples R China
基金
中国国家自然科学基金;
关键词
WO3; films; Solvent; Growth process; Vapor pressure; Visible-light photocatalysis; GAS-SENSING PROPERTIES; TUNGSTEN-OXIDE; THIN-FILMS; FACILE SYNTHESIS; FTO SUBSTRATE; NANORODS; ACID; OXIDATION; NANOCOMPOSITE; NANOPARTICLES;
D O I
10.1016/j.jpcs.2020.109380
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Controllable growth of nanostructured tungsten trioxide (WO3) films grown on substrates with good adhesion in a single-step process is still challenging. In this paper, immobilized WO3 nanostructures with different microstructure and morphology were prepared by solvothermal methods in various solvents. X-ray diffraction (XRD), scanning electron microscope (SEM), Transmission Electron Microscopy (TEM), Energy Dispersive Spectroscopy (EDS) and Raman spectra results showed that the type of solvents has a great influence on the microstructure, morphology and elemental component of as-prepared WO3 nanostructures, and their growth process had been analyzed with the vapor pressure and viscosity. The electrochromic studies for the WO3 nanostructures (nano-wire arrays) synthesized in ethanol exhibited low electrochemical impedance spectroscopy (EIS), high peak current density, and efficient electron hole separation efficiency with respect to other products. The nanowire arrays showed the highest photocatalytic performance, and the degradation rate can reach 93.3% in 1 h. It is deduced that the excellent photocatalytic performance was mainly attribute to the efficient charge transfer capability.
引用
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页数:9
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