Effect of hydrogen carrier gas on AlN and AlGaN growth in AMEC Prismo D-Blue® MOCVD platform

被引：21

作者：

Bao, Qilong ^{[1
,2
]}

Zhu, Tiankai ^{[1
]}

Zhou, Ning ^{[1
]}

Guo, Shiping ^{[1
]}

Luo, Jun ^{[2
]}

Zhao, Chao ^{[2
]}

机构：

[1] Adv Microfabricat Equipment Inc, Shanghai 201201, Peoples R China

[2] Chinese Acad Sci, Inst Microelect, Key Lab Microelect Devices & Integrated Technol, Beijing 100029, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2015年 / 419卷

关键词：

Atomic force microscopy; X-ray diffraction; Computation simulation; Metal organic chemical vapor deposition; AIN; AlGaN; CHEMICAL-VAPOR-DEPOSITION; PARASITIC REACTION; MOVPE; SUBSTRATE; SURFACE; LAYER;

D O I：

10.1016/j.jcrysgro.2015.02.084

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Effect of hydrogen flow rate on AlN and AlGaN growth is investigated in AMEC Prism(R) D-Blue MOCVD platform. It is found that AlN growth rate increases with the increase of hydrogen flow rate. Al composition in AlGaN material increases initially with the increase of hydrogen flow rate at relatively low hydrogen flow rates (< 120 slm) and then saturates at high hydrogen flow rates. GaN partial growth rate shows a "U" shaped profile. Computational fluid dynamics (CFD) simulation of AlN growth is performed to understand the growth mechanism. The simulation results indicate that higher hydrogen Flow rate could suppress the parasitic reaction and particle formation during AlN growth. Thus more source gases can be transported to the wafer surface, resulting in the increase of AlN growth rate. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：52 / 56

页数：5

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