Design and modeling considerations for fully-integrated silicon W-Band transceivers

被引：2

作者：

Nicolson, S. T. ^{[1
]}

Laskin, E. ^{[1
]}

Khanpour, M. ^{[1
]}

Aroca, R. ^{[1
]}

Tomkins, A. ^{[1
]}

Yau, K. H. K. ^{[1
]}

Chevalier, P. ^{[2
]}

Garcia, P. ^{[2
]}

Chantre, A. ^{[2
]}

Sautreuil, B. ^{[2
]}

Voinigescu, S. P. ^{[1
]}

机构：

[1] Univ Toronto, Edwards S Rogers Sr Dept Elect & Comp Engn, Toronto, ON M5S 3G4, Canada

[2] STMicroelect, F-38926 Crolles, France

来源：

2007 IEEE INTERNATIONAL WORKSHOP ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY, PROCEEDINGS: ENABLING TECHNOLOGIES FOR EMERGING WIRELESS SYSTEMS | 2007年

关键词：

millimeter wave transceivers; Doppler radar; integrated circuit modeling; design methodology;

D O I：

10.1109/RFIT.2007.4443938

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

This paper presents circuit design methodologies, modeling techniques, and circuit architectures for silicon transceivers above 77GHz. The architectures of three existing CMOS and SiGe BiCMOS receivers and transceivers are compared to demonstrate the variety of choices available to the circuit designer, and to highlight design challenges that arise in transceivers above 77GHz. A comparison of 65nm CMOS and 130nm SiGe BiCMOS circuits illustrates the suitability of both technologies in W-Band systems. Inductor and transformer scaling is demonstrated beyond 160GHz, and the extension of an existing modeling technique for inductors is shown to accurately model transformers and transmission tines. The optimum biasing of power amplifiers is investigated in CMOS and SiGe HBT technologies.

引用

页码：141 / +

页数：3

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