Copper Direct Bonding: An Innovative 3D Interconnect

被引：29

作者：

Gueguen, Pierric ^{[1
]}

Di Cioccio, Lea ^{[1
]}

Morfouli, Panagiota ^{[2
]}

Zussy, Marc ^{[1
]}

Dechamp, Jerome ^{[1
]}

Bally, Laurent ^{[1
]}

Clavelier, Laurent ^{[1
]}

机构：

[1] CEA, LETI, MINATEC, 17 Rue Martyrs, F-38054 Grenoble 9, France

[2] IMEP, LAHC, F-38016 Grenoble, France

来源：

2010 PROCEEDINGS 60TH ELECTRONIC COMPONENTS AND TECHNOLOGY CONFERENCE (ECTC) | 2010年

关键词：

INTEGRATION; SILICON;

D O I：

10.1109/ECTC.2010.5490697

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

3D technology will be the next step for the development of microelectronic devices. Vertical interconnection is one of the challenging issues. Cu/SiO2 patterned surface might be one of the possible techniques to address it. In this work, direct patterned Cu/SiO2 surfaces bonding at room temperature, atmospheric pressure and ambient air is demonstrated. High alignment and bonding quality is achieved for both Wafer to Wafer (WtW) and Die to Wafer (DtW) bonding. Electrical characterizations of Cu/Cu contacts are presented for multiple contact areas and post bonding annealing temperature. The specific contact resistance is lowered down to rho(c) =47 m Omega.mu m(2) for 3x3 mu m(2) Cu/Cu contacts on Kelvin structures.

引用

页码：878 / 883

页数：6

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