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Fabrication of Nanosilicon Ink and Two-Dimensional Array of Nanocrystalline Silicon Quantum Dots
被引:5
|作者:
Ishikawa, Tetsuya
[1
,2
]
Nikaido, Hiroki
[1
,2
]
Usami, Koichi
[1
,2
]
Uchida, Ken
[1
,2
,3
]
Oda, Shunri
[1
,2
,3
]
机构:
[1] Tokyo Inst Technol, Quantum Nanoelect Res Ctr, Meguro Ku, Tokyo 1528552, Japan
[2] Tokyo Inst Technol, Dept Phys Elect, Meguro Ku, Tokyo 1528552, Japan
[3] Japan Sci & Technol Agcy JST, SORST, Meguro Ku, Tokyo 1528552, Japan
关键词:
SURFACE MODIFICATION;
NANOPARTICLES;
PARTICLES;
TRANSPORT;
D O I:
10.1143/JJAP.49.125002
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
An assembly of nanoparticles using a colloidal solution is promising for the fabrication of future highly integrated electron and photoelectronic devices because of low manufacturing cost, flexible substrates, and alternative methods that can overcome the limitation of top-down technology. We have successfully prepared two-dimensional arrays of nanocrystalline silicon (nc-Si) quantum dots with a uniform size of 10 nm. However, the area of two-dimensional arrays has been limited because of the problems of dissolution in water and agglomeration of nc-Si due to a high surface reactivity. The key issue is the surface modification of nc-Si particles. In this study, we have demonstrated the evaluation of surface modification states of nc-Si QDs by zeta potential and particle size distribution measurements. As a result of the optimization of the surface modification process, we have successfully obtained a well-dispersed nc-Si QD solution, namely, nanosilicon ink. Furthermore, we have successfully fabricated a two-dimensional array of nc-Si QDs using the Langmuir-Blodgett film method in the entire 1 x 1 cm(2) silicon substrate. (C) 2010 The Japan Society of Applied Physics
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