Core-level photoemission study of Ga1-xMnxAs

被引：275

作者：

Okabayashi, J ^{[1
]}

Kimura, A

Rader, O

Mizokawa, T

Fujimori, A

机构：

[1] Univ Tokyo, Dept Phys, Bunkyou Ku, Tokyo 1130033, Japan

[2] Univ Tokyo, Inst Solid State Phys, Synchrotron Radiat Lab, Minato Ku, Tokyo 1068666, Japan

[3] Univ Tokyo, Dept Elect Engn, Bunkyou Ku, Tokyo 1130033, Japan

来源：

PHYSICAL REVIEW B | 1998年 / 58卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.58.R4211

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have studied the electronic structure of Mn impurities in GaAs by Mn 2p core-level photoemission spectroscopy. From cluster-model analysis assuming the neutral (Mn3+) or negatively ionized (Mn2+) ground state, electronic structure parameters have been obtained. In either case, the Mn d electron number is evaluated to be similar to 5 using the obtained parameters, meaning that the neutral Mn3+ impurity, if it exists, consists of the Mn 3d(5) configuration and a valence hole bound to it through p-d hybridization and/or Coulomb interaction. We discuss the exchange interaction between the Mn local spin and the Valence hole as well as the stability of the neutral impurity against the ionization of the valence hole.

引用

页码：R4211 / R4214

页数：4

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