Development and analysis of a high-pressure micro jet pad conditioning system for interlayer dielectric chemical mechanical planarization

被引:12
|
作者
Seike, Y
DeNardis, D
Sugiyama, M
Miyachi, K
Doi, T
Philipossian, A
机构
[1] Asahi Sunac Corp, NC Div, Aichi 4888688, Japan
[2] Univ Arizona, Dept Environm Chem & Engn, Tucson, AZ 85721 USA
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2005年 / 44卷 / 03期
关键词
high-pressure micro jet (HPMJ); chemical mechanical planarization (CMP); pad conditioning; kinetic energy; flow rate; coefficient of friction (COF); removal rate; inter layer dielectric (ILD);
D O I
10.1143/JJAP.44.1225
中图分类号
O59 [应用物理学];
学科分类号
摘要
Conventional diamond disc pad conditioning methods employed in chemical mechanical planarization (CMP) have presented several problems for integrated circuit (IC) manufacturers. These include diamond wear, which reduces pad life, and diamond fracture, which causes the semiconductor devices to be scratched by loose diamond fragments. In order to attempt to overcome these problems, a high-pressure micro jet (HPMJ) conditioning system, in which pressurized ultra pure water (VPW) ranging from 3-30MPa is sprayed on the pad surface, is proposed and developed. This study first analyzes the extent of the kinetic energy of water droplets ejecting from the HPMJ system and its utility in conditioning the pad surface. Subsequently, CMP is used to polish interlayer dielectric (ILD) films using both conventional diamond discs as well as HPMJ conditioning methods. Results, reported in the form of coefficient of friction (COF), removal rate, pad surface roughness and pad surface quality, highlight both the advantages as well as disadvantages of the HPMJ method compared to conventional conditioning schemes.
引用
收藏
页码:1225 / 1231
页数:7
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