The transport mechanism of YSZ thin films prepared by MOCVD

被引：36
作者：
Chun, SY
Mizutani, N
机构：
[1] AIST, Osaka Natl Res Inst, Dept Mat Phys, Ikeda, Osaka 5638577, Japan
[2] Tokyo Inst Technol, Dept Inorgan Mat Engn, Meguro Ku, Tokyo 152, Japan
来源：
APPLIED SURFACE SCIENCE | 2001年 / 171卷 / 1-2期
关键词：
impedance spectroscopy; metal-organic chemical vapor deposition; electrical conductivity;
D O I：
10.1016/S0169-4332(00)00543-2
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The effect of microstructure and substrate on the electrical conductivity of yttria stabilized zirconia film (YSZ), prepared by metal-organic chemical vapor deposition (MOCVD), was investigated by complex impedance analysis. The electrical conductivity of the thin films with columnar structure was controlled by the oxygen ion conduction across the columnar grain boundary. The YSZ thin film deposited on Al2O3 (1 0 2) MgO (1 0 0) and SiO2 with columnar grains exhibit the electrical response of polycrystalline ceramic specimen. The dependence of activation energy and impedance diagram on substrate is increased according to the mismatch of thermal expansion coefficient between film and substrate. (C) 2001 Elsevier Science B.V. All rights reserved.
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页码：82 / 88
页数：7
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