Voltage-tunable duial-band In(Ga)As quantum-ring infrared photodetector

被引：12

作者：

Dai, Jong-Horng

Lin, Y-I-Hing

Lee, Si-Chen ^{[1
]}

机构：

[1] Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan

[2] Natl Taiwan Univ, Grad Inst Elect Engn, Taipei 10617, Taiwan

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2007年 / 19卷 / 17-20期

关键词：

dual bands infrared photodetector; quantum dots (QDs); quantum ring;

D O I：

10.1109/LPT.2007.903344

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The ten-period In(Ga)As quantum-ring infrared photodetector (QRIP) prepared by molecular beam epitaxy is investigated. The quantum rings show narrow-sized distributions that are segregated into two groups. The QRIP demonstrates a dual-band operation with response peak shifting from the long wavelength of 9.5 mu m at biases less than 0.6 V to the middle wavelength of 6.8 mu m at biases larger than 0.8 V. The maximum peak responsivity at 20 K is 422 mA/W at 1.2-V bias.

引用

页码：1511 / 1513

页数：3

共 18 条

[1]

BHATTACHARYA P, 2005, APPL PHYS LETT, V86, P11063

[2] Transverse-electric-field-enhanced response in InAs/AlGaAs/GaAs quantum-dot infrared photodetectors [J].

Chen, SD ;

Chen, YY ;

Lee, SC .

APPLIED PHYSICS LETTERS, 2005, 86 (25) :1-3

[3] High-performance narrow-bandwidth multicolor InAs/AlGaAs/GaAs quantum dot infrared photodetector [J].

Chen, SD ;

Chen, YY ;

Lee, SC .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (08) :6307-6311

[4] In(Ga)As self-assembled quantum ring formation by molecular beam epitaxy [J].

Granados, D ;

García, JM .

APPLIED PHYSICS LETTERS, 2003, 82 (15) :2401-2403

[5] In0.6Ga0.4As/GaAs quantum-dot infrared photodetector with operating temperature up to 260 K [J].

Jiang, L ;

Li, SS ;

Yeh, NT ;

Chyi, JI ;

Ross, CE ;

Jones, KS .

APPLIED PHYSICS LETTERS, 2003, 82 (12) :1986-1988

[6] Multicolor InGaAs quantum-dot infrared photodetectors [J].

Kim, SM ;

Harris, JS .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2004, 16 (11) :2538-2540

[7] Effect of silicon dopant on the performance of InAs/GaAs quantum-dot infrared photodetectors [J].

Lin, SY ;

Tsai, YJ ;

Lee, SC .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2004, 43 (2A) :L167-L169

[8] Transport characteristics of InAs/GaAs quantum-dot infrared photodetectors [J].

Lin, SY ;

Tsai, YJ ;

Lee, SC .

APPLIED PHYSICS LETTERS, 2003, 83 (04) :752-754

[9] Growth and electronic properties of self-organized quantum rings [J].

Lorke, A ;

Luyken, RJ ;

Garcia, JM ;

Petroff, PM .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2001, 40 (3B) :1857-1859

[10] Quantum-well infrared photodetector with voltage-switchable quadratic and linear response [J].

Maier, T ;

Schneider, H ;

Liu, HC ;

Walther, M ;

Koidl, P .

APPLIED PHYSICS LETTERS, 2006, 88 (05) :1-3

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