Effects of bump height and UBM structure on the reliability performance of 60μm-pitch solder micro bump interconections

被引:0
作者
Huang, Yu-Wei [1 ]
Zhan, Chau-Jie [1 ]
Lin Yu-Min [1 ]
Juang, Jing-Ye [1 ]
Huang, Shin-Yi [1 ]
Chen, Su-Mei [1 ]
Fan, Chia-Wen [1 ]
Cheng, Ren-Shin [1 ]
Chao, Shu-Han
Lin, C. K.
Lin, Jie-An
Chen, Chih
机构
[1] Ind Technol Res Inst, Elect & Optoelect Res Labs, Hsinchu 31040, Taiwan
来源
2014 INTERNATIONAL CONFERENCE ON ELECTRONICS PACKAGING (ICEP) | 2014年
关键词
solder micro bumps; under bump metallurgy; reliability test; temperature cycling test; high temperature storage; electromigration test; JOINTS; THERMOMIGRATION; INTEGRATION;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Recently, three dimensional integration circuits technology has received much attention since the demands of functionality and performance in microelectronic packaging for electronic products are rapidly increasing. For high-performance 3D chip stacking, high density interconnections are required. In the current types of interconnects, solder micro bumps have been widely adopted. For fine pitch solder micro bump joints, selections of bump height and UBM structure are the important issues that would show the significant effects on the reliability performances of solder micro bump interconnection. In this study, effects of bump height and UBM structure on the reliability properties of lead-free solder micro interconnections with a pitch of 60 mu m were discussed. The chip-to-chip test vehicle having more than 4290 solder micro bump interconnections with a bump pitch of 60 mu m was used in this study. To evaluate the effects of bump height and UBM structure on the reliability performance of micro joints, two groups of solder joint were made. The first group of micro joints had a total bump height of 29 mu m. In this group, Cu/Sn/Cu joint with a thickness of 7 mu m/15 mu m/7um, Cu/Sn/Ni/Cu joint having a thickness of 7 mu m/15 mu m/2 mu m/5 mu m and Cu/Ni/Sn/Ni/Cu joint with a thickness of 5 mu m/2 mu m/15 mu m/2um/5 mu m were selected. The second group of micro joints had a total bump height of 24 mu m. In this group, Cu/Sn/Cu joint having a thickness of 7 mu m/10 mu m/7um, Cu/Sn/Ni/Cu joint with a thickness of 7 mu m/10 mu m/2 mu m/5 mu m and Cu/Ni/Sn/Ni/Cu joint having a thickness of 5 mu m/2 mu m/10 mu m/2um/5 mu m were chosen. We used the fluxless thermocompression bonding process to form these two groups of micro joints. After bonding process, the chip stack was assembled by capillary-type underfill. Reliability tests of temperature cycling test (TCT), high temperature storage (HTS) and electromigration test (EM) were selected to assess the effect of bump height and UBM structure on the reliability properties of those two groups of solder micro bump interconnections.
引用
收藏
页码:612 / 617
页数:6
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