Properties of n-Ge epilayer on Si substrate with in-situ doping technology

The properties of n-Ge epilayer deposited on Si substrate with in-situ doping technology in a cold-wall ultrahigh vacuum chemical vapor deposition (UHVCVD) system are investigated. The growth temperature of similar to 500 degrees C is optimal for the n-Ge growth in our equipment with a phosphorus concentration of similar to 10(18) cm(-3). In the n-Ge epilayer, the depth profile of phosphorus concentration is box-shaped and the tensile strain of 0.12% confirmed by x-ray diffraction measurement is introduced which results in the red shift of the photoluminescence. The enhancements of photoluminescence intensity with the increase of the doping concentration are observed, which is consistent with the modeling of the spontaneous emission spectrum for direct transition of Ge. The results are of significance for guiding the growth of n-Ge epilayer with in-situ doping technology.