Rapid radiative decay of charged excitons

被引：46

作者：

Sanvitto, D

Hogg, RA

Shields, AJ

Whittaker, DM

Simmons, MY

Ritchie, DA

Pepper, M

机构：

[1] Toshiba Res Europe Ltd, Cambridge Res Lab, Cambridge CB4 0WE, England

[2] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

来源：

PHYSICAL REVIEW B | 2000年 / 62卷 / 20期

关键词：

D O I：

10.1103/PhysRevB.62.R13294

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We discuss the decay process of free trions, which differs radically from that of the neutral exciton or localized trions. A theoretical model for the decay time of free trions shows that due to the three particle decay process a rapid radiative decay, compared to the neutral exciton, is expected. We demonstrate the rapid decay of negatively charged excitons in remotely doped GaAs/AlGaAs quantum wells (QW's) experimentally and show the effects of temperature and well-width on the decay of free negatively charged excitons.

引用

收藏

页码：R13294 / R13297

页数：4

相关论文

共 15 条

[1] RADIATIVE LIFETIME OF FREE-EXCITONS IN QUANTUM-WELLS [J].

ANDREANI, LC ;

TASSONE, F ;

BASSANI, F .

SOLID STATE COMMUNICATIONS, 1991, 77 (09) :641-645

[2] DECAY MEASUREMENTS OF FREE-EXCITON AND BOUND-EXCITON RECOMBINATION IN DOPED GAAS/ALXGA1-XAS QUANTUM-WELLS [J].

BERGMAN, JP ;

HOLTZ, PO ;

MONEMAR, B ;

SUNDARAM, M ;

MERZ, JL ;

GOSSARD, AC .

PHYSICAL REVIEW B, 1991, 43 (06) :4765-4770

[3] RADIATIVE LIFETIMES OF EXCITONS IN QUANTUM-WELLS - LOCALIZATION AND PHASE-COHERENCE EFFECTS [J].

CITRIN, DS .

PHYSICAL REVIEW B, 1993, 47 (07) :3832-3841

[4] ENHANCED RADIATIVE RECOMBINATION OF FREE-EXCITONS IN GAAS QUANTUM-WELLS [J].

DEVEAUD, B ;

CLEROT, F ;

ROY, N ;

SATZKE, K ;

SERMAGE, B ;

KATZER, DS .

PHYSICAL REVIEW LETTERS, 1991, 67 (17) :2355-2358

[5]

Esser A, 2000, PHYS STATUS SOLIDI A, V178, P489, DOI 10.1002/1521-396X(200003)178:1<489::AID-PSSA489>3.0.CO

[6]

2-R

[7] LINEWIDTH DEPENDENCE OF RADIATIVE EXCITON LIFETIMES IN QUANTUM-WELLS [J].

FELDMANN, J ;

PETER, G ;

GOBEL, EO ;

DAWSON, P ;

MOORE, K ;

FOXON, C ;

ELLIOTT, RJ .

PHYSICAL REVIEW LETTERS, 1987, 59 (20) :2337-2340

[8] Charged exciton dynamics in GaAs quantum wells [J].

Finkelstein, G ;

Umansky, V ;

Bar-Joseph, I ;

Ciulin, V ;

Haacke, S ;

Ganiere, JD ;

Deveaud, B .

PHYSICAL REVIEW B, 1998, 58 (19) :12637-12640

[9] PHOTOLUMINESCENCE LINESHAPE OF NARROW N-TYPE MODULATION-DOPED QUANTUM-WELLS [J].

KUCHLER, R ;

ABSTREITER, G ;

BOHM, G ;

WEIMANN, G .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (01) :88-91

[10] Photoluminescence due to positively charged excitons in undoped GaAs/AlxGa1-xAs quantum T wells [J].

Osborne, JL ;

Shields, AJ ;

Pepper, M ;

Bolton, FM ;

Ritchie, DA .

PHYSICAL REVIEW B, 1996, 53 (19) :13002-13010